FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 32

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
TO-251 (IPAK) (Continued)
IRFU234B
FQU8N25
FQU6N25
IRFU224B
FQU4N25
IRFU214B
FQU6N40C
IRFU330B
FQU5N40
IRFU320B
FQU3N40
IRFU310B
FQU5N50C
IRFU430B
FQU5N50
IRFU420B
FQU4N50
FQU2N50B
SSU1N50B
FQU1N50
FQU5N60C
SSU4N60B
FQU3N60
FQU2N60
FQU2N60C
SSU2N60B
FQU1N60
FQU1N60C
SSU1N60B
FQU2N80
FQU1N80
FQU2N90
FQU3P50
SFU9310
FQU6P25
FQU4P25
SFU9224
SFU9214
SFU9230B
TO-251(IPAK) P-Channel
Products
Min. (V)
BV
-500
-400
-250
-250
-250
-250
-200
250
250
250
250
250
250
400
400
400
400
400
400
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
800
800
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
0.45
0.55
1.75
1.75
11.5
11.5
1.1
1.6
3.4
3.4
1.4
1.5
1.8
2.6
2.7
5.3
5.5
2.5
2.5
3.6
4.7
4.7
6.3
7.2
4.9
1.1
2.1
2.4
0.6
12
20
1
2
1
1
9
5
8
4
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-27
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
13.5
12.5
GS
6.6
4.3
8.1
7.7
8.3
8.5
4.8
5.9
5.5
29
12
16
25
10
14
18
25
13
14
10
15
22
10
12
12
18
17
21
10
16
29
6
6
4
9
5
9
= 5V
I
D
6.6
6.2
4.4
3.8
2.2
4.5
4.5
3.4
3.1
1.7
3.5
3.5
2.3
2.6
1.6
1.3
1.1
2.8
2.8
2.4
1.9
1.8
0.9
1.8
1.7
2.1
1.5
4.7
3.1
2.5
1.5
5.4
3
2
4
2
1
1
1
(A)
MOSFETs
P
D
1.5
49
50
45
42
37
25
48
48
45
41
30
26
48
48
50
41
45
26
25
49
49
50
45
44
44
30
28
28
50
45
50
50
36
55
45
30
19
49
(W)