FDS3992 Fairchild Semiconductor, FDS3992 Datasheet - Page 8

• Manufacturer Part Number: FDS3992
• Description: MOSFET N-CH DUAL 100V 4.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS3992

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.062 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.062Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS3992; FDS3992TR

©2004 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT FDS3992 2 1 3 ;
Ca 12 8 2.3e-10
Cb 15 14 3.5e-10
Cin 6 8 7.47e-10
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 108
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.61e-9
Ldrain 2 5 1e-9
Lsource 3 7 1.98e-9
RLgate 1 9 56.1
RLdrain 2 5 10
RLsource 3 7 19.8
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 25.e-3
Rgate 9 20 3.7
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 20e-3
Rvthres 22 8 Rvthresmod 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*45),2.5))}
.MODEL DbodyMOD D (IS=2.4E-12 N=1.04 RS=13e-3 TRS1=2.1e-3 TRS2=4.7e-7
+ CJO=5.5e-10 M=0.57 TT=3.25e-8 XTI=4.6)
.MODEL DbreakMOD D (RS=1.6 TRS1=2.4e-3 TRS2=-1e-5)
.MODEL DplcapMOD D (CJO=1.6e-10 IS=1e-30 N=10 M=0.54)
.MODEL MmedMOD NMOS (VTO=3.8 KP=2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.7)
.MODEL MstroMOD NMOS (VTO=4.35 KP=28 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=3.26 KP=0.04 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=37 RS=0.1)
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-1e-8)
.MODEL RdrainMOD RES (TC1=1.15e-2 TC2=2.8e-5)
.MODEL RSLCMOD RES (TC1=3.3e-3 TC2=1e-6)
.MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6)
.MODEL RvthresMOD RES (TC1=-4.8e-3 TC2=-1.1e-5)
.MODEL RvtempMOD RES (TC1=-3e-3 TC2=1.5e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3 VOFF=-2)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-3)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=1)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1 VOFF=-1.5)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
rev Aug 2002
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
RSLC2
6
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
+
-
MSTRO
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
MWEAK
17
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
FDS3992 Rev. B1
SOURCE
DRAIN
2
3