FDS3992 Fairchild Semiconductor, FDS3992 Datasheet - Page 2

• Manufacturer Part Number: FDS3992
• Description: MOSFET N-CH DUAL 100V 4.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS3992

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.062 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.062Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS3992; FDS3992TR

©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: R
3: R
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
g(TOT)
g(TH)
gs
gs2
gd
RR
drain pins. R
Symbol
θJA
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is measured with 1.0 in
J
= 25°C, L = 37mH, I
θJC
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
is guaranteed by design while R
2
copper on FR-4 board
AS
= 3A.
Parameter
(V
GS
θCA
= 10V)
T
A
is determined by the user’s board design.
= 25°C unless otherwise noted
I
V
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
GS
GS
C
GS
GS
DS
GS
DS
DD
GS
= 250µA, V
= 4.5A, V
= 2A, V
= 4.5A, V
= 4.5A, dI
= 4.5A, dI
= 150
= 4.5A
= 2A
= 80V
= 0V
= ±20V
= 25V, V
= 0V to 10V
= 0V to 2V
= V
= 50V, I
= 10V, R
Test Conditions
DS
o
GS
C
, I
GS
D
GS
D
SD
SD
= 6V
GS
GS
GS
= 4.5A
= 250µA
= 10V
/dt= 100A/µs
/dt= 100A/µs
= 10V,
= 0V,
= 0V
= 27Ω
T
V
I
I
D
g
C
DD
= 1.0mA
= 4.5A
= 150
= 50V
o
C
Min
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.054
0.072
0.107
750
118
Typ
1.4
3.5
2.1
2.8
27
11
23
28
26
8
-
-
-
-
-
-
-
-
-
-
-
0.062
0.108
0.123
±100
Max
1.25
250
1.9
1.0
15
47
81
48
65
1
4
-
-
-
-
-
-
-
-
-
-
-
FDS3992 Rev. B1
Units
nA
nC
nC
nC
nC
nC
µA
pF
pF
pF
nC
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
Ω