FDS3992 Fairchild Semiconductor, FDS3992 Datasheet - Page 3

MOSFET N-CH DUAL 100V 4.5A SO-8

FDS3992

Manufacturer Part Number
FDS3992
Description
MOSFET N-CH DUAL 100V 4.5A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDS3992

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
62 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.062 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.062Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS3992
FDS3992TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS3992
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS3992
Quantity:
2 240
Part Number:
FDS3992-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
2 500
Part Number:
FDS3992_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
200
100
10
0
1
0.001
0.01
10
0.1
2
1
-5
10
V
GS
-5
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
25
Ambient Temperature
= 10V
T
A
, AMBIENT TEMPERATURE (
10
50
Figure 3. Normalized Maximum Transient Thermal Impedance
-4
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-4
SINGLE PULSE
75
10
T
-3
10
100
A
-3
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
o
C)
125
t, RECTANGULAR PULSE DURATION (s)
10
10
-2
-2
150
t, PULSE WIDTH (s)
10
Figure 2. Maximum Continuous Drain Current vs
10
-1
-1
5
4
3
2
1
0
25
10
10
0
50
Ambient Temperature
0
T
A
, AMBIENT TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
75
10
10
1
1
J
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
= P
A
I = I
= 25
DM
100
25
x Z
o
P
C
DM
θJA
o
10
10
C DERATE PEAK
150 - T
1
R
/t
2
2
125
x R
2
θJA
o
C)
t
1
θJA
=50
125
t
C
2
+ T
o
V
C/W
GS
A
FDS3992 Rev. B1
= 10V
10
10
3
3
150

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