FDS3992 Fairchild Semiconductor, FDS3992 Datasheet - Page 4

MOSFET N-CH DUAL 100V 4.5A SO-8

FDS3992

Manufacturer Part Number
FDS3992
Description
MOSFET N-CH DUAL 100V 4.5A SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDS3992

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
62 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.062 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.062Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS3992
FDS3992TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS3992
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS3992
Quantity:
2 240
Part Number:
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Manufacturer:
FAIRCHILD/仙童
Quantity:
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Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
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Part Number:
FDS3992_NL
Manufacturer:
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Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Figure 5. Forward Bias Safe Operating Area
0.01
200
100
0.1
30
25
20
15
10
10
80
75
70
65
60
55
50
5
0
1
0.1
3.5
1.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
Figure 7. Transfer Characteristics
T
T
SINGLE PULSE
OPERATION IN THIS
DD
LIMITED BY r
J
C
= MAX RATED
= 25
V
= 15V
V
GS
AREA MAY BE
GS
1.5
T
4.0
o
J
= 10V
C
= 6V
= 25
V
V
DS
GS
o
, DRAIN TO SOURCE VOLTAGE (V)
C
, GATE TO SOURCE VOLTAGE (V)
2.0
DS(ON)
1
4.5
I
D
, DRAIN CURRENT (A)
Current
T
J
2.5
= 150
5.0
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
10
T
A
5.5
T
J
= 25°C unless otherwise noted
3.5
= -55
o
C
6.0
100
4.0
10µs
100µs
100ms
10ms
1ms
1s
300
6.5
4.5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
0.1
30
25
20
15
10
7
1
5
0
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
2.5
2.0
1.5
1.0
0.5
0.01
0
Resistance vs Junction Temperature
-80
Figure 8. Saturation Characteristics
If R = 0
t
If R ≠ 0
t
T
AV
AV
A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
STARTING T
= (L)(I
= (L/R)ln[(I
= 25
o
C
-40
AS
V
)/(1.3*RATED BV
DS
0.1
0.5
T
AS
t
J
, DRAIN TO SOURCE VOLTAGE (V)
AV
, JUNCTION TEMPERATURE (
J
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
= 150
Capability
0
o
C
DSS
1.0
1
40
STARTING T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
- V
DD
DSS
V
V
)
GS
GS
- V
80
V
= 10V
= 6V
GS
DD
1.5
10
J
) +1]
= 10V, I
o
= 25
C)
V
120
V
GS
o
GS
C
D
= 5V
FDS3992 Rev. B1
= 4.5A
= 7V
100
160
2.0

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