FDS3992 Fairchild Semiconductor, FDS3992 Datasheet - Page 5

• Manufacturer Part Number: FDS3992
• Description: MOSFET N-CH DUAL 100V 4.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS3992

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 62 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.062 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.062Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS3992; FDS3992TR

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
2000
1000
Figure 13. Capacitance vs Drain to Source
100
10
1.2
1.0
0.8
0.6
0.1
-80
C
C
C
V
OSS
ISS
RSS
GS
= C
≅ C
= 0V, f = 1MHz
= C
-40
Junction Temperature
GS
DS
GD
V
+ C
T
+ C
DS
J
, JUNCTION TEMPERATURE (
GD
, DRAIN TO SOURCE VOLTAGE (V)
GD
1
0
Voltage
40
V
T
GS
A
10
80
= 25°C unless otherwise noted
= V
DS
o
, I
C)
D
120
= 250µA
160
100
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
I
DD
D
= 250µA
= 50V
2
-40
T
J
, JUNCTION TEMPERATURE (
Gate Currents
Q
4
g
0
, GATE CHARGE (nC)
40
6
WAVEFORMS IN
DESCENDING ORDER:
80
8
I
I
D
D
= 4.5A
= 2A
o
C)
120
10
FDS3992 Rev. B1
160
12