FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet - Page 7

• Manufacturer Part Number: FDS6990AS
• Description: MOSFET NCH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6990AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0512
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990AS; FDS6990ASTR

FDS6990AS Rev. A2
Typical Characteristics
Figure 17. Gate Charge Test Circuit
Figure 15. Unclamped Inductive
+
-
R
10V
GE
V
vary t
required peak I
Figure 19. Switching Time
Same type as DUT
V
V
GS
Drain Current
I
GS
GS
g(REF)
R
10 F
0V
P
V
Load Test Circuit
GEN
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
to obtain
DS
V
tp
V
GS
Test Circuit
50k
GS
V
AS
DS
1 F
I
AS
(continued)
DUT
0.01Ω
L
DUT
R
DUT
L
+
–
+
–
+
–
V
V
V
DD
DD
DD
7
Figure 20. Switching Time Waveforms
V
V
GS
DS
10V
V
0V
0V
Figure 18. Gate Charge Waveform
GS
Figure 16. Unclamped Inductive
10%
t
d(ON)
90%
Q
I
GS
50%
t
AS
ON
10%
Waveforms
t
Pulse Width
P
t
Q
r
Charge, (nC)
G(TOT)
Q
GD
BV
t
AV
DSS
t
d(OFF)
90%
V
50%
DS
t
OFF
V
t
10%
f
DD
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90%