FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet - Page 6

• Manufacturer Part Number: FDS6990AS
• Description: MOSFET NCH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6990AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0512
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990AS; FDS6990ASTR

FDS6990AS Rev. A2
Typical Characteristics
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
Figure 12. FDS6990AS SyncFET body diode
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
reverse recovery characteristic.
12.5nS/Div
12.5nS/Div
(continued)
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 125° C
15
= 100° C
= 25°C
20
www.fairchildsemi.com
25
30