FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet - Page 4

• Manufacturer Part Number: FDS6990AS
• Description: MOSFET NCH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6990AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0512
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990AS; FDS6990ASTR

FDS6990AS Rev. A2
Typical Characteristics
20
16
12
20
15
10
8
4
0
5
0
1.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
V
DS
GS
V
I
= 5V
D
= 10V
GS
4.5V
= 7.5A
-25
= 10V
V
0.5
2
GS
V
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
T
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
A
4.0V
= 125
25
o
3.5V
C
2.5
1
50
3.0V
25
o
C
75
-55
2.5V
o
C
o
1.5
C)
3
100
125
150
3.5
2
4
Figure 6. Body Diode Forward Voltage Variation
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.001
0.01
100
1.8
1.6
1.4
1.2
0.8
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
2
2
1
1
0
T
0
A
V
Drain Current and Gate Voltage.
= 25
GS
T
V
= 3.0V
3.5V
A
GS
o
= 125
C
Gate-to-Source Voltage.
= 0V
V
SD
o
4
V
C
, BODY DIODE FORWARD VOLTAGE (V)
4.0V
4
GS
0.2
, GATE TO SOURCE VOLTAGE (V)
T
25
I
A
D
4.5V
, DRAIN CURRENT (A)
= 125
o
C
8
o
C
6
0.4
5.0V
-55
o
C
12
6.0V
0.6
8
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16
I
D
= 3.75A
10V
0.8
20
10