FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet - Page 5

• Manufacturer Part Number: FDS6990AS
• Description: MOSFET NCH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6990AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0512
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990AS; FDS6990ASTR

FDS6990AS Rev. A2
Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
1
0.1
Figure 7. Gate Charge Characteristics.
0
I
0.001
R
D
SINGLE PULSE
0.01
R
DS(ON)
=7.5A
0.1
θ
JA
0.0001
V
T
1
GS
A
= 135
= 25
LIMIT
= 10V
2
o
o
C
C/W
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
0.02
Q
1
0.01
4
g
, GATE CHARGE (nC)
V
SINGLE PULSE
0.001
DS
= 10V
DC
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10s
6
Figure 11. Transient Thermal Response Curve.
1s
15V
100s
10
10ms
8
0.01
1ms
20V
100µs
10
100
12
0.1
t
1
5
, TIME (sec)
50
40
30
20
10
1000
0
0.001
100
20
0.1
Figure 8. Capacitance Characteristics.
1
Figure 10. Single Pulse Maximum
f = 1 MHz
V
GS
0.01
= 0 V
V
Power Dissipation.
DS
,
DRAIN TO SOURCE VOLTAGE (V)
0.1
10
t
1
1
, TIME (sec)
1
P(pk)
Duty Cycle, D = t
T
R
R
J
θ JA
– T
θ JA
100
(t) = r(t) * R
A
10
t
= 135 °C/W
1
= P * R
t
2
SINGLE PULSE
R
θ
JA
T
θ JA
A
10
= 135°C/W
100
θ JA
1
www.fairchildsemi.com
= 25°C
(t)
/ t
2
C
C
C
1000
rss
iss
oss
1000
30