FDS6990AS Fairchild Semiconductor, FDS6990AS Datasheet - Page 2

• Manufacturer Part Number: FDS6990AS
• Description: MOSFET NCH DUAL 30V 7.5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDS6990AS

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 550pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 29 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 0512
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6990AS; FDS6990ASTR

FDS6990AS Rev. A2
Electrical Characteristics
Symbol
Off Characteristics
BV
∆ BV
I
I
On Characteristics (Note 2)
V
∆ V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics (Note 2)
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
DSS
GSS
D(on)
t
t
t
t
t
t
t
t
Q
Q
Q
Q
S
rr
FS
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GS(th)
SD
∆ T
∆ T
DS(on)
iss
oss
rss
G
rr
g(TOT)
g
gs
gd
GS(th)
DSS
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs = 10V
Total Gate Charge at Vgs = 5V
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
T
A
= 25°C unless otherwise noted
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
V
I
d
D
D
F
iF
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DS
GS
DS
GS
DD
GS
= 10A,
= 1 mA, Referenced to 25 ° C
= 1 mA, Referenced to 25 ° C
/d
= 4.5 V, I
= 0 V, I
= 24 V, V
= ± 20 V, V
= V
= 10 V, I
= 10 V, I
= 10 V, V
= 15 V, I
= 15 V, V
= 15 mV, f = 1.0 MHz
= 15 V, I
= 10 V, R
= 15 V, I
= 4.5 V, R
= 15 V, I
= 0 V, I
t
= 300 A/µs
GS
Test Conditions
, I
D
S
D
D
D
D
D
D
D
= 1 mA
GS
D
GS
= 2.3 A
DS
2
GEN
= 1 mA
GEN
DS
= 7.5 A
= 7.5 A, T
= 1 A,
= 1 A,
= 10 A, V
= 6.5 A
= 10 A
= 0 V
= 5 V
= 0 V,
= 0 V
= 6 Ω
= 6 Ω
GS
J
= 125 ° C
= 5 V
(Note 3)
(Note 2)
Min
30
20
1
Typ
550
162
1.7
3.1
1.5
2.0
0.6
31
–3
17
26
21
29
60
24
14
10
18
11
8
5
4
9
8
5
6
Max
± 100
500
2.9
0.7
22
35
28
16
10
38
18
16
24
10
14
8
3
8
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Units
mV/ ° C
mV/ ° C
m Ω
n s
µ A
nA
nC
nC
nC
nC
nS
nC
pF
pF
ns
ns
ns
ns
ns
ns
ns
pF
Ω
V
V
A
S
A
V