FGA50N100BNTD2 Fairchild Semiconductor, FGA50N100BNTD2 Datasheet - Page 7

• Manufacturer Part Number: FGA50N100BNTD2
• Description: IGBT NPT 1000V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA50N100BNTD2

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 50A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA50N100BNTD2 Rev. A
Typical Performance Characteristics
1E-3
0.01
0.1
1
1E-5
single pulse
0.5
0.2
0.1
0.05
0.02
0.01
Figure 24.Transient Thermal Impedance of IGBT
1E-4
Rectangular Pulse Duration [sec]
1E-3
7
0.01
0.1
P
Peak T
Duty Factor, D = t1/t2
DM
j
= Pdm x Zthjc + T
t
1
t
2
1
C
10
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