FGA50N100BNTD2 Fairchild Semiconductor, FGA50N100BNTD2 Datasheet - Page 6

• Manufacturer Part Number: FGA50N100BNTD2
• Description: IGBT NPT 1000V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA50N100BNTD2

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 50A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA50N100BNTD2 Rev. A
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
Figure 21. Reverse Current
Figure 23. Reverse Recovery Characteristics vs.
1E-3
0.01
250
100
100
300
80
70
60
0.1
10
10
1
1
10
50
1
Forward Current
Safe Operating Area
V
GE
200
20
Collector-Emitter Voltage, V
= 15V, T
Forward Current,I
Reverse Voltage, V
10
C
400
30
= 125
T
T
J
J
o
= 125
= 25
C
100
40
o
600
o
C
C
F
di/dt = 100A/
T
[A]
R
C
[V]
= 25
CE
50
800
o
T
[V]
C
I
rr
rr
1000
µ
s
60
3000
1000
6
4
2
6
Figure 20. Forward Characteristics
Figure 22. Reverse Recovery Characteristics vs.
100
200
0.1
80
60
40
20
10
0
1
20
0
di/dt
40
1
T
60
J
= 125
Forward Voltage, V
80 100 120 140 160 180 200
o
2
C
di/dt[A/
T
T
rr
3
µ
J
s]
= 25
o
C
I
T
4
F
F
C
[V]
T
T
= 60A
= 25
I
C
C
rr
= 25
= 125
o
C
5
o
C
o
C
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