FGA50N100BNTD2 Fairchild Semiconductor, FGA50N100BNTD2 Datasheet - Page 3

• Manufacturer Part Number: FGA50N100BNTD2
• Description: IGBT NPT 1000V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA50N100BNTD2

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 50A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA50N100BNTD2 Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
200
160
120
200
160
120
4.5
3.0
1.5
1.0
80
40
80
40
0
0
25
0
0
T
Common Emitter
V
T
T
Characteristics
Common Emitter
V
C
C
C
Temperature at Variant Current Level
GE
Collector-EmitterCase Temperature, T
GE
= 25
= 25
= 125
= 15V
= 15V
1
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
C
C
o
2
C
50
2
15V
20V
4
3
75
10V
4
6
I
C
90A
60A
= 10A
30A
5
100
CE
CE
V
8
[V]
[V]
GE
7V
8V
9V
C
6
= 6V
[
o
C
]
125
10
7
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
200
160
120
200
160
120
80
40
80
40
20
16
12
0
0
8
4
0
0
2
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
o
Collector-Emitter Voltage, V
o
C
o
2
4
4
C
C
Gate-Emitter Voltage, V
30A
I
Gate-Emitter Voltage,V
C
= 10A
4
6
8
20V
60A
12
6
8
15V
90A
Common Emitter
T
C
GE
GE
= -40
CE
[V]
[V]
10
16
V
[V]
o
8
C
10V
GE
7V
9V
8V
GE
= 6V
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