FGA50N100BNTD2 Fairchild Semiconductor, FGA50N100BNTD2 Datasheet - Page 4

• Manufacturer Part Number: FGA50N100BNTD2
• Description: IGBT NPT 1000V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA50N100BNTD2

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 50A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA50N100BNTD2 Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
8000
6000
4000
2000
0.01
100
500
0.1
10
20
16
12
0
1
8
4
0
1
0
1
*Notes:
1. T
2. T
3. Single Pulse
Collector-Emitter Voltage, V
C
J
Collector-Emitter Voltage, V
= 150
= 25
4
Gate-Emitter Voltage, V
30A
I
C
C
C
o
ies
oes
C
o
= 10A
10
C
C
8
res
60A
90A
100
12
Common Emitter
V
T
GE
C
Common Emitter
T
10
= 25
C
= 0V, f = 1MHz
GE
= 25
CE
o
CE
[V]
C
[V]
GE
o
16
[V]
C
1000
10
100
1ms
10 ms
DC
µ
s
µ
3000
s
20
30
4
Figure 8. Saturation Voltage vs. V
Figure 12. Load Current vs. Frequency
Figure 10. Gate charge Characteristics
120
100
80
60
40
20
15
12
20
16
12
0
9
6
3
0
8
4
0
10
0
0
Duty cycle : 50%
T
Power Dissipation = 63W
0
C
Common Emitter
T
C
= 100
= 25
o
o
55
C
C
4
Gate-Emitter Voltage, V
30A
I
C
= 10A
Gate Charge, Q
Frequency [kHz]
10
V
load Current : peak of square wave
CC
1
110
V
= 600V
8
CC
600V
60A
= 200V
165
12
g
90A
400V
[nC]
10
Common Emitter
T
C
GE
2
= 125
[V]
220
16
GE
o
C
www.fairchildsemi.com
275
10
20
3