FGA50N100BNTD2 Fairchild Semiconductor, FGA50N100BNTD2 Datasheet - Page 5

• Manufacturer Part Number: FGA50N100BNTD2
• Description: IGBT NPT 1000V 50A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA50N100BNTD2

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 50A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGA50N100BNTD2 Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 15. Turn-on Characteristics vs.
Figure 17. Switching Loss vs. Gate Resistance
200
100
300
100
50
10
10
10
1
10
10
10
Common Emitter
V
I
T
T
C
CC
C
C
Collector Current
= 60A
Gate Resistance
20
= 25
= 125
= 600V, V
t
t
o
d(on)
r
C
o
30
C
20
20
Collector Current, I
Gate Resistance, R
Gate Resistance, R
GE
40
= 15V
50
30
30
60
Common Emitter
V
I
T
T
C
CC
C
C
Common Emitter
V
T
T
t
= 60A
r
= 25
= 125
C
C
GE
= 600V, V
C
= 25
= 125
G
70
E
G
[A]
E
= 15V, R
on
[ Ω ]
o
off
[
C
o
Ω
t
o
40
C
d(on)
40
]
C
o
80
C
GE
G
= 10
= 15V
90 100
Ω
50
50
5
Fig 18. Switching Loss vs. Collector Current
Figure 14. Turn-off Characteristics vs.
Figure 16. Turn-off Characteristics vs.
2000
1000
1000
100
100
0.1
10
10
30
10
1
10
10
10
Common Emitter
V
T
T
GE
C
C
20
= 25
= 125
20
Collector Current
= 15V, R
o
C
Gate Resistance
o
30
30
C
20
Gate Resistance, R
Collector Current, I
Collector Current, I
G
= 10
40
40
t
E
E
d(off)
Ω
on
off
t
f
50
50
30
60
60
Common Emitter
V
I
T
T
C
Common Emitter
V
I
T
T
C
C
CC
C
C
C
= 60A
CC
= 25
= 125
= 60A
= 25
= 125
= 600V, V
G
C
= 600V, V
70
70
C
[
[A]
Ω
o
t
t
o
[A]
C
o
d(off)
f
]
C
o
C
40
C
80
80
GE
GE
= 15V
90 100
= 15V
90 100
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