PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 7

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet
H=30 mil
RO/RO4350B1
e
C801
1000 pF
r=3.48
C802
1000 pF
RF_IN
1300 Ohm
R805
1200 Ohm
R804
8
4
In
NC
2
S2
3
Out
NC
6
TL101
7
1
5
1
B
C803
1000 pF
2
3
C
S
E
4
S1
TL109
R801
100 Ohm
10 Ohm
R802
S3
PTFB192503EL/FL_INPUT
TL124
3
R803
10 Ohm
TL110
TL112
TL135
C101
10 pF
TL136
TL134
TL133
TL131
TL130
TL127
TL113
TL111
TL132
TL128
2
1
2
1
2
1
2
1
2
1
2
1
3
3
3
3
3
3
C103
TL120
C105
C104
2200000 pF
10000000 pF
C106
10000000 pF
2200000 pF
TL121
TL103
7 of 15
R102
10 Ohm
R101
10 Ohm
TL126
TL117
TL118
TL129
TL115
C107
8.2 pF
C102
8.2 pF
TL116
TL107
TL108
1
3
TL102
2
2
3
1
TL122
TL123
b 1 9 2 5 0 3 e f l _ b d i n _ 0 8 - 2 3 - 2 0 1 0
TL114
TL125
TL105
TL104
TL106
1
2
4
PTFB192503EL
PTFB192503FL
3
TL119
Rev. 09, 2010-11-09
GATE DUT
(Pin G)