PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 13

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Package Outline Specifications
Data Sheet
[.062] (SPH)
1.575
4X R1.524
2X R1.626
[R.060]
[R.064]
1.016
[.040]
Diagram Notes—unless otherwise specified:
4X 30°
45° X 2.032
[45° X .080]
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = V
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
V
E
Package H-33288-6
22.352±.200
[.880±.008]
2X 22.860
2X 12.700
[.900]
[.045] (4 PLS)
[.500]
4X 1.143
L C
C L
34.036
13 of 15
[1.340]
G
D
27.940
[1.100]
H - 3 3288 - 6_ po _02 - 1 8 - 2010
V
F
[.200] (2 PLS)
S
DD
2X 5.080
C L
, E, F = N.C.
9.398
[.370]
4.039
[ .159
9.779
[.385]
+. 010
4.889±.510
+.254
–. 005
[.192±.020]
–. 127
]
PTFB192503EL
PTFB192503FL
19.558±.510
[.770±.020]
Rev. 09, 2010-11-09