PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 3

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-25
-30
-35
-40
-45
-50
-55
-60
20
19
18
17
16
15
14
33
38
Gain & Efficiency vs. Output Power
Two-carrier WCDMA 3GPP Drive-up
V
1990 Lower
1990 Upper
1960 Lower
1960 Upper
1930 Lower
1930 Upper
V
DD
DD
35
40
PAR = 8:1, 10 MHz carrier spacing
= 30 V, I
= 30 V, I
37
42
Power Sweep, CW
Efficiency
Output Power (dBm)
Gain
Output Power (dBm)
DQ
DQ
BW 3.84 MHz
39
44
= 1.85 A, 3GPP WCDMA,
= 1.85 A, ƒ = 1990 MHz
41
46
(data taken in a production test fixture)
43
48
45
50
47
52
49
54
5
65
55
45
35
25
15
3 of 15
-20
-25
-30
-35
-40
-45
-50
-55
-60
60
55
50
45
40
35
30
25
20
15
1890
33
Two-carrier WCDMA 3GPP Drive-up
V
10 MHz carrier spacing, BW 3.84 MHz
V
35
DD
Gain, Efficiency & Return Loss
DD
= 30 V, I
1920
= 30 V, I
3GPP WCDMA, PAR = 8:1,
37
Two-tone Broadband
Output Power (dBm)
Efficiency
Frequency (MHz)
vs. Frequency
39
DQ
DQ
1950
= 1.85 A, ƒ = 1990 MHz
= 1.85 A, P
41
Efficiency
IMD3
Gain
IMD Low
RL
43
1980
ACPR
PTFB192503EL
PTFB192503FL
O UT
IMD Up
45
Rev. 09, 2010-11-09
= 110 W
2010
47
49
40
35
30
25
20
15
10
5
0
-10
-15
-20
-25
-30
-35
-40
-45
-50
-5