PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 12

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Component
Input
C101
C102, C107
C103, C104
C105, C106
C801, C802, C803
R101, R102, R802, R803
R801
R804
R805
S1
S2
S3
Output
C201, C206
C202, C203
C204, C205
C207
C208, C209
C210, C211
C212, C213
Data Sheet
(cont.)
Description
Chip capacitor, 10 pF
Chip capacitor, 8.2 pF
Capacitor, 10 μF
Chip capacitor, 2.2 μF
Capacitor, 1000 pF
Resistor, 10 W
Resistor, 100 W
Resistor, 1300 W
Resistor, 1200 W
Transistor
Voltage Regulator
Potentiometer, 2k W
Chip capacitor, 0.1 μF
Chip capacitor, 10 μF
Capacitor, 10 μF
Capacitor, 10 pF
Chip capacitor, 1 μF
Chip capacitor, 2.2 μF
Chip capacitor, 1.1 pF
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PTFB192503EL
PTFB192503FL
Rev. 09, 2010-11-09