PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet

RF MOSFET Small Signal RFP-LDMOS 9

PTFB192503EL V1

Manufacturer Part Number
PTFB192503EL V1
Description
RF MOSFET Small Signal RFP-LDMOS 9
Manufacturer
Infineon Technologies
Datasheet

Specifications of PTFB192503EL V1

Configuration
Single
Resistance Drain-source Rds (on)
0.03 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
1.9 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-33288-6
Other names
FB192503ELV1NP
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
RF Characteristics
Two-carrier WCDMA Measurements
fixture)
V
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
Data Sheet
ESD: Electrostatic discharge sensitive device—observe handling precautions!
DD
= 30 V, I
20
19
18
17
16
15
DQ
33
= 1.9 A, P
V
10 MHz carrier spacing BW 3.84MHz
DD
35
Two-carrier WCDMA 3GPP
= 30 V, I
CASE
3GPP WCDMA, PAR = 8:1,
37
Output Power (dBm)
OUT
Efficiency
= 25°C unless otherwise indicated
DQ
39
= 1.85 A, ƒ = 1990 MHz
Gain
= 50 W average, ƒ
41
43
(not subject to production test—verified by design/characterization in Infineon test
45
47
1
= 1980 MHz, ƒ
49
50
40
30
20
10
0
1 of 15
2
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
Symbol
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Features
G
h
IMD
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
Typical CW performance, 1990 MHz, 30 V
- Output power at P
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
Integrated ESD protection. Human Body Model,
Class 2 (minimum)
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Pb-free, RoHS-compliant
ps
D
Min
1dB
Typ
–35
19
28
= 240 W
PTFB192503EL
PTFB192503FL
Rev. 09, 2010-11-09
Max
Unit
dBc
dB
%

Related parts for PTFB192503EL V1

PTFB192503EL V1 Summary of contents

Page 1

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz ...

Page 2

... Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (T = 70°C, 200 W CW) CASE Ordering Information Type and Version Package Type PTFB192503EL V1 H-33288-6 PTFB192503EL V1 R250 H-33288-6 PTFB192503FL V2 H-34288-4/2 PTFB192503FL V2 R250 H-34288-4/2 Data Sheet Symbol Conditions Symbol ...

Page 3

Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Drive- 1.85 A, 3GPP WCDMA PAR = 8:1, 10 MHz carrier spacing BW 3.84 MHz -25 ...

Page 4

Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive- 1. ƒ = 1990 MHz, ƒ = 1989 MHz 1 2 -20 -25 -30 -35 -40 -45 Efficiency -50 -55 -60 IMD ...

Page 5

Confidential, Limited Internal Distribution Typical Performance (cont.) CW Gain & Efficiency vs. Output Power 1.85 A, ƒ = 1990 MHz Gain +85°C +25°C 16 Efficiency –10° C ...

Page 6

Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source G Z Source W Frequency MHz R 1900 2.63 –3.92 1930 2.56 –3.67 1960 2.48 –3.44 1990 2.42 –3.21 2020 2.35 –2.98 See next page for reference circuit information Data Sheet ...

Page 7

Confidential, Limited Internal Distribution Reference Circuit C803 1000 Out C802 1000 pF R801 100 Ohm C801 R805 1000 pF 1200 Ohm ...

Page 8

Confidential, Limited Internal Distribution Reference Circuit (cont.) C202 10000000 pF TL209 TL207 DUT (Pin V) C213 1.1 pF TL232 TL205 TL234 TL210 TL235 DRAIN DUT (Pin D) 4 TL233 C212 1.1 pF TL206 DUT ...

Page 9

Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB192503EL or PTFB192503FL PCB 0.76 mm [.030"] thick, Electrical Characteristics at 1990 MHz Transmission Electrical Line Characteristics Input 0.000 λ, 144.35 W TL224 TL101 0.037 λ, 51.58 W 0.053 λ, 9.67 ...

Page 10

Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Transmission Electrical Line Characteristics Output TL201, TL202, TL203, TL213 0.026 λ, 34.08 W TL204 0.012 λ, 51.58 W TL205 0.084 λ, 6.86 W 0.029 λ, 23.60 W TL206 ...

Page 11

Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information PTFB192503EL/FL_02 Test Fixture Part No. LTN/PTFB192503EF Find Gerber files for this test fixture on the Infineon Web site at RO4350, .030 C803 C802 R801 S3 R802 S2 R803 R101 C107 ...

Page 12

Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Input C101 Chip capacitor C102, C107 Chip capacitor, 8.2 pF C103, C104 Capacitor, 10 μF C105, C106 Chip capacitor, 2.2 μF C801, C802, C803 Capacitor, 1000 pF Resistor, 10 ...

Page 13

Confidential, Limited Internal Distribution Package Outline Specifications 45° X 2.032 [45° X .080] 4X 30° 4X R1.524 [R.060] 2X R1.626 [R.064] 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary ...

Page 14

Confidential, Limited Internal Distribution Package Outline Specifications 45° X 2.032 [45° X .080] 2X 30° R0.508 +.381 -.127 [ ] R.020 +.015 -.005 1.575 [.062] (SPH) 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances ...

Page 15

... PTFB192503EL V1/ PTFB192503FL V2 Confidential, Limited Internal Distribution Revision History: 2010-11-09 Previous Version: 2010-10-07, Data Sheet Page Subjects (major changes since last revision Changed eared flange package type 1 Updated VSWR specification to 10:1 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document ...

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