PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 14

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

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Package Outline Specifications
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Data Sheet
4X R0.508 +.381
1.575
[.062] (SPH)
[
R.020 +.015
[45° X .080]
45° X 2.032
-.005
-.127
Diagram Notes—unless otherwise specified:
1.016
]
[.040]
2X 30°
C L
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = V
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
V
(cont.)
Package H-34288-4/2
22.352±.200
[.880±.008]
23.114
2X 12.700
[.910]
22.860
[.500]
[.900]
L C
L C
14 of 15
D
G
C 66065- A 0003- C 743- 01- 0 027 H - 34288- 4_ 2 . d w g
V
9.398
DD
[.370]
S
.
2X 5.080
4.039 +.254
[
[.200]
2X 1.143
.159 +.010
[.045]
9.779
[.385]
-.127
-.005
[.192±.020]
4.889±.510
]
19.558±.510
[.770±.020]
PTFB192503EL
PTFB192503FL
Rev. 09, 2010-11-09