PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-20
-30
-40
-50
-60
37
35
V
DD
Efficiency
39
= 30 V, I
ƒ
IMD 3
1
41
Output Power, PEP (dBm)
= 1990 MHz, ƒ
40
1930 MHz
1960 MHz
1990 MHz
V
at Selected Frequencies
Two-tone Drive-up
Output Power, PEP (dBm)
DD
DQ
Two-tone Drive-up
43
= 30 V, I
= 1.85 A, Tone Spacing = 1 MHz
45
45
(cont.)
DQ
47
2
IMD3
= 1.85 A,
= 1989 MHz
49
50
51
53
55
55
45
40
35
30
25
20
15
10
5
0
4 of 15
20
19
18
17
16
15
60
50
40
30
20
10
37
22
I
Efficiency
DQ
39
= 1.85 A, ƒ
Gain
24
ƒ
1
41
Two-tone Voltage Sweep
= 1990 MHz, ƒ
V
Output Power, PEP (dBm)
Output Power = 53.3 dBm
Two-tone Drive-up
DD
43
26
Supply Voltage (V)
= 30 V, I
1
IMD3
= 1990 MHz, ƒ
Gain
45
28
DQ
47
2
= 1.85 A,
= 1989 MHz
49
PTFB192503EL
PTFB192503FL
30
Efficiency
2
51
= 1989 MHz
Rev. 09, 2010-11-09
32
53
55
34
50
40
30
20
10
0
-15
-20
-25
-30
-35
-40