PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 11

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Circuit Assembly Information
Test Fixture Part No.
Find Gerber files for this test fixture on the Infineon Web site at
Reference circuit assembly diagram (not to scale)
Data Sheet
RF_IN
R802
C104
C106
C105
C103
C101
RO4350, .030
S3
R803
(cont.)
R801
PTFB192503EL/FL_02
R101
R102
LTN/PTFB192503EF
C803
PTFB192503_IN_02
C107
C802
S2
C102
V
DD
R805
R804
C801
(60)
S1
http://www.infineon.com/rfpower
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C202
C203
RO4350, .030
C201
C206
C210
C211
C212
C208
C213
C209
PTFB192503_OUT_02
C207
C205
C204
µF
(60)
10 µF
b 1 9 2 5 0 3 e f l _ C D _ 1 1 - 0 9 - 2 0 1 0
10
V
V
PTFB192503EL
PTFB192503FL
DD
DD
Rev. 09, 2010-11-09
RF_OUT