PTFB192503EL V1 Infineon Technologies, PTFB192503EL V1 Datasheet - Page 15

• Manufacturer Part Number: PTFB192503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB192503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.9 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB192503ELV1NP

PTFB192503EL V1/ PTFB192503FL V2
Confidential, Limited Internal Distribution
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Edition 2010-11-09
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Data Sheet
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Subjects (major changes since last revision)
Changed eared flange package type
Updated VSWR specification to 10:1
2010-11-09
2010-10-07, Data Sheet
15 of 15
Rev. 09, 2010-11-09
Data Sheet