ADE7569ASTZF16-RL Analog Devices Inc, ADE7569ASTZF16-RL Datasheet - Page 94

• Manufacturer Part Number: ADE7569ASTZF16-RL
• Description: IC,Power Metering,QFP,64PIN,PLASTIC
• Manufacturer: Analog Devices Inc

Specifications of ADE7569ASTZF16-RL

• Applications: Energy Measurement
• Core Processor: 8052
• Program Memory Type: FLASH (16 kB)
• Controller Series: ADE75xx
• Ram Size: 512 x 8
• Interface: I²C, SPI, UART
• Number Of I /o: 20
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ADE7566/ADE7569
FLASH MEMORY
OVERVIEW
Flash memory is a type of nonvolatile memory that is in-circuit
programmable. The default state of a byte of flash memory is 0xFF
(erased). When a byte of flash memory is programmed, the
required bits change from 1 to 0. The flash memory must be
erased to turn the 0s back to 1s. However, a byte of flash
memory cannot be erased individually. The entire segment, or
page, of flash memory that contains the byte must be erased.
The ADE7566/ADE7569 provide 16 kB of flash program/
information memory. This memory is segmented into 32 pages
of 512 bytes each. Therefore, to reprogram 1 byte of flash
memory, the 511 bytes in that page must be erased. The flash
memory can be erased by page or all at once in a mass erase.
There is a command to verify that a flash write operation has
completed successfully. The ADE7566/ADE7569 flash memory
controller also offers configurable flash memory protection.
The 16 kB of flash memory are provided on-chip to facilitate
code execution without any external discrete ROM device
requirements. The program memory can be programmed in-
circuit, using the serial download mode provided or using
conventional third party memory programmers.
Flash/EE Memory Reliability
The flash memory arrays on the ADE7566/ADE7569 are fully
qualified for two key Flash/EE memory characteristics:
Flash/EE memory cycling endurance and Flash/EE memory
data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four independent,
sequential events.
1.
2.
3.
4.
Initial page erase sequence.
Read/verify sequence.
Byte program sequence.
Second read/verify sequence.
Rev. PrA | Page 94 of 136
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 0x00 to 0xFF until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in the Specifications section, the ADE7566/ADE7569
flash memory endurance qualification has been carried out in
accordance with JEDEC Retention Lifetime Specification (A117)
over the industrial temperature range of −40°C, +25°C, and +85°C.
The results allow the specification of a minimum endurance
figure over supply and temperature of 100,000 cycles, with a
minimum endurance figure of 20,000 cycles of operation at 25°C.
Retention is the ability of the flash memory to retain its
programmed data over time. Again, the part have been qualified
in accordance with the formal JEDEC Retention Lifetime
Specification (A117) at a specific junction temperature (T
As part of this qualification procedure, the flash memory is
cycled to its specified endurance limit before data retention is
characterized. This means that the flash memory is guaranteed to
retain its data for its full specified retention lifetime every time
the flash memory is reprogrammed. It should also be noted that
retention lifetime, based on an activation energy of 0.6 eV,
derates with T
300
250
200
150
100
50
0
40
J
Figure 78. Flash/EE Memory Data Retention
as shown in Figure 78.
50
Preliminary Technical Data
T
J
60
JUNCTION TEMPERATURE (°C)
ANALOG DEVICES
100 YEARS MIN.
SPECIFICATION
AT T
70
J
= 55 ° C
80
90
100
J
= 55°C).
110