PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 8

• Manufacturer Part Number: PSMN1R5-30YL
• Description: MOSFET,N CH,30V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(S)
g
200
150
100
3.0
2.5
2.0
1.5
1.0
fs
50
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
2
0
20
4
40
6
60
8
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003aac452
V
003aac451
I
D
GS
(A)
(V)
80
10
Rev. 01 — 9 April 2010
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
Fig 9.
Fig 11. Transfer characteristics: drain current as a
8000
6000
4000
2000
(pF)
C
(A)
I
80
60
40
20
D
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Input and reverse transfer capacitances as a
2
0
C
C
iss
rss
4
1
T
j
= 175 °C
PSMN1R5-30YL
6
2
T
8
3
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
V
003aac455
003aad113
V
GS
GS
(V)
(V)
10
4
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