PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 4

• Manufacturer Part Number: PSMN1R5-30YL
• Description: MOSFET,N CH,30V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN1R5-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
10
10
10
(A)
I
AL
10
150
-1
3
2
1
10
All information provided in this document is subject to legal disclaimers.
-3
T
003aac446
mb
(°C)
200
10
Rev. 01 — 9 April 2010
-2
10
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
(2)
(1)
(3)
t
AL
003aac266
(ms)
10
50
PSMN1R5-30YL
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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