PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 2

• Manufacturer Part Number: PSMN1R5-30YL
• Description: MOSFET,N CH,30V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R5-30YL

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN1R5-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN1R5-30YL
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
[1]
LFPAK
Package
Name
Symbol
Q
Avalanche ruggedness
E
DS(AL)S
G(tot)
Continuous current is limited by package.
Quick reference data
Parameter
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 9 April 2010
Simplified outline
SOT669 (LFPAK)
Conditions
V
V
V
I
R
D
…continued
GS
DS
GS
GS
= 100 A; V
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
1 2 3 4
= 4.5 V; I
= 12 V; see
= 10 V; T
= 50 Ω; unclamped
mb
sup
D
j(init)
= 10 A;
≤ 30 V;
Figure 15
= 25 °C;
Graphic symbol
PSMN1R5-30YL
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
36.2 -
-
Version
Max Unit
241
2 of 15
nC
mJ