PSMN1R5-30YL NXP Semiconductors, PSMN1R5-30YL Datasheet - Page 6

MOSFET,N CH,30V,100A,LFPAK

PSMN1R5-30YL

Manufacturer Part Number
PSMN1R5-30YL
Description
MOSFET,N CH,30V,100A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R5-30YL

Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.3mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN1R5-30YL
Manufacturer:
NXP
Quantity:
150
Part Number:
PSMN1R5-30YLC
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
PSMN1R5-30YLC
0
NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN1R5-30YL
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
100 ns
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
see
V
f = 1 MHz
I
see
I
I
see
I
see
V
see
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
= 25 °C; see
= 20 A; V
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 10 A; V
= 0 A; V
= 10 A; V
= 10 A; V
Figure
Figure 13
Figure 13
Figure 14
Figure 14
Figure
Figure 15
Figure
Figure 16
= 30 V; V
= 30 V; V
= 12 V; see
= 12 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 10 V; I
Rev. 01 — 9 April 2010
DS
12; see
15; see
15; see
GS
DS
DS
DS
DS
DS
DS
D
D
D
D
= 0 V; V
GS
GS
GS
DS
GS
GS
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 12 V; V
= 12 V; V
= 12 V; V
= 0 V; T
= V
= V
= V
= 15 A; T
Figure 17
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 13
Figure 16
Figure 16
N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK
; T
; T
; T
GS
j
15;
= 25 °C; t
j
j
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
= 150 °C;
= 100 °C;
= 25 °C
j
j
j
= 25 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 4.5 V;
= 4.5 V;
av
=
PSMN1R5-30YL
Min
35
30
27
1.3
0.65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.7
-
-
-
-
-
-
1.8
-
-
1.3
0.77
77.9
70
36.2
11.6
8
3.6
8.7
2.34
5057
1082
398
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
2.15
-
2.45
1
100
100
100
1.9
2.8
2.4
1.5
1.5
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
6 of 15

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