AT90USB647-MU Atmel, AT90USB647-MU Datasheet - Page 25

• Manufacturer Part Number: AT90USB647-MU
• Description: MCU, 8BIT, 64K FLASH, USB, 64QFN
• Manufacturer: Atmel

Specifications of AT90USB647-MU

• Controller Family/series: AT90
• No. Of I/o's: 48
• Eeprom Memory Size: 2KB
• Ram Memory Size: 4KB
• Cpu Speed: 16MHz
• No. Of: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 64KB
• Oscillator Type: External, Internal
• Package: 64QFN EP
• Device Core: AVR
• Family Name: AT90
• Maximum Speed: 20 MHz
• Ram Size: 4 KB
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 48
• Interface Type: SPI/TWI/USART/USB
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 4
• Lead Free Status / Rohs Status: Details

7593K–AVR–11/09
Table 5-2.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing EERIE to one enables the EEPROM Ready Interrupt if the I bit in SREG is set. Writing
EERIE to zero disables the interrupt. The EEPROM Ready interrupt generates a constant inter-
rupt when EEPE is cleared.
• Bit 2 – EEMPE: EEPROM Master Programming Enable
The EEMPE bit determines whether setting EEPE to one causes the EEPROM to be written.
When EEMPE is set, setting EEPE within four clock cycles will write data to the EEPROM at the
selected address If EEMPE is zero, setting EEPE will have no effect. When EEMPE has been
written to one by software, hardware clears the bit to zero after four clock cycles. See the
description of the EEPE bit for an EEPROM write procedure.
• Bit 1 – EEPE: EEPROM Programming Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write.
Step 2 is only relevant if the software contains a Boot Loader allowing the CPU to program the
Flash. If the Flash is never being updated by the CPU, step 2 can be omitted. See
gramming” on page 366
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
interrupted EEPROM access to fail. It is recommended to have the Global Interrupt Flag cleared
during all the steps to avoid these problems.
EEPM1
1. Wait until EEPE becomes zero.
2. Wait until SELFPRGEN in SPMCSR becomes zero.
3. Write new EEPROM address to EEAR (optional).
4. Write new EEPROM data to EEDR (optional).
5. Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6. Within four clock cycles after setting EEMPE, write a logical one to EEPE.
0
0
1
1
EEPM0
0
1
0
1
EEPROM Mode Bits
Programming
for details about Boot programming.
3.4 ms
1.8 ms
1.8 ms
Time
–
Operation
Erase and Write in one operation (Atomic Operation)
Erase Only
Write Only
Reserved for future use
AT90USB64/128
“Memory Pro-
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