ML610Q429-NNNTBZ03A7 Rohm Semiconductor, ML610Q429-NNNTBZ03A7 Datasheet - Page 371

• Manufacturer Part Number: ML610Q429-NNNTBZ03A7
• Description: MCU 8BIT 48K FLASH 128-TQFP
• Manufacturer: Rohm Semiconductor

Specifications of ML610Q429-NNNTBZ03A7

• Core Processor: nX-U8/100
• Core Size: 8-Bit
• Speed: 4.2MHz
• Connectivity: I²C, SSP, UART/USART
• Peripherals: LCD, Melody Driver, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 48KB (24K x 16)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.1 V ~ 3.6 V
• Data Converters: A/D 2x12b, 2x24b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 70°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

25.
25.1 Overview
25.1.1
25.1.2
This LSI includes a Battery Level Detector (BLD).
16 levels of threshold voltages can be selected by setting Battery Level Detector control register 0 (BLDCON0).
• Threshold voltages:
• Accuracy:
• Temperature deviation: ±0.1%/°C
BLD consists of the comparator and threshold voltage select circuits.
Figure 25-1 shows the configuration of the Battery Level Detector.
Battery Level Detector
Configuration
Features
BLDCON0 : Battery Level Detector control register 0
BLDCON1 : Battery Level Detector control register 1
One out of the 16 levels can be selected
±2% (Typ.)
Figure 25-1 Configuration of Battery Level Detector
Data bus
Threshold voltage
V
select circuit
DD
BLDCON0
25 – 1
Comparator
ENBL
BLDCON1
ML610Q428/ML610Q429 User’s Manual
BLDF
Chapter 25 Battery Level Detector