FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 69

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

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TO-220F (Continued)
FQPF15P12
FQPF22P10
FQPF17P10
SFS9540
FQPF12P10
FQPF8P10
SFS9520
FQPF5P10
SFS9510
FQPF47P06
FQPF27P06
FQPF17P06
SFS9Z34
FQPF11P06
SFS9Z24
SFS2955
FQPF7P06
SFS9Z14
Products
Min. (V)
BV
-120
-100
-100
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
0.175
10V
0.19
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.2
0.2
0.6
1.2
0.3
0.5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-64
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
29
40
30
43
21
12
16
84
33
21
30
13
15
15
9
9
=5V
I
D
13.2
10.5
10.7
8.2
5.3
4.6
2.9
2.5
8.6
7.5
7.3
5.3
5.3
15
30
17
12
12
(A)
MOSFETs
P
D
41
41
53
38
28
29
16
62
47
39
36
30
29
29
24
24
45
23
(W)