FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 203

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

Discrete
Diode
F F PF 04 F 150 DS
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(Continued)
S: Single
DN: Dual Cathode Common
DP: Dual Anode Common
DS: Dual Series
20: 200V ~ 150: 1500V
A,B,C,E: Modulation
F: Fast
U: Ultrafast
X: Xtra Fast
04: 4A
P: TO-220
PF: TO-220F
A: TO-3P
AF: TO-3PF
L: TO-264
B: D
D: D-PAK
V: SOT-23
F: FRD
Y: SBD
Type
Voltage Rating (x10)
t
Current Rating
Package
Device Type
Fairchild
rr
Characteristics
2
-PAK
8-10
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