FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 123

• Manufacturer Part Number: FMG2G200US60
• Description: IGBT MOLDING 600V 200A 7PM-HA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G200US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 695W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-HA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -

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JFETs (Continued)
BSR56
SOT-23 P-Channel
MMBFJ270
MMBFJ177
MMBFJ176
MMBFJ271
MMBFJ175
MMBF5460
MMBF5461
MMBF5462
SOT-323 N-Channel
FJX597JH
SOT-623F N-Channel
FJZ594J
SuperSOT N-Channel
MMBF5434
MMBFJ108
TO-92 N-Channel
FJN598J
J300
2N5555
2N5484
J210
2N5485
J110
J309
PN5434
J211
J107
2N5457
2N5486
J212
J109
J106
J310
Products
BV
(V)
40
30
30
30
30
30
40
40
40
20
20
25
25
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
GDS
Dissipation
Power
(mW)
250
225
225
225
225
225
225
225
225
100
100
350
350
150
350
350
350
350
350
625
625
350
350
625
625
350
350
625
625
625
P
D
Min (V)
0.75
0.5
0.8
1.5
1.8
0.3
0.5
0.5
2.5
0.5
0.5
–
–
1
–
–
–
1
4
2
4
1
3
1
3
1
1
2
2
2
Typ (V) Max (V) @ I
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
2.5
4.5
7.5
1.5
1.5
1.5
4.5
4.5
6.5
10
10
–
–
2
4
6
6
9
4
3
3
4
4
4
4
6
6
6
6
6
(off)
0.001
0.001
0.001
0.003
0.001
0.003
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
–
–
–
1
1
1
1
1
1
1
1
(µA) @ V
2-118
Discrete Power Products –
15
15
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
DS
–
–
–
5
5
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.15
0.15
100
200
1.5
0.1
50
30
80
15
10
12
30
15
40
24
2
2
6
7
1
2
4
6
1
2
4
7
1
8
0.35
0.35
0.35
I
15
20
25
50
60
16
30
15
10
30
20
20
40
60
DSS
–
–
–
–
–
–
–
–
–
5
9
5
5
DS
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
15
15
15
15
15
15
15
15
10
5
5
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
6000
8000
1.5
3.5
10
–
–
–
–
1
2
–
–
–
–
–
–
–
3
4
–
–
6
–
1
4
7
–
–
8
GFS
15000
18000
12
20
12
12
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4
5
6
6
7
5
8
300
150
R
(Ω)
250
125
25
18
10
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
8
6
DS
I
0.0002
0.003
0.003
D
(µA)
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–