FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 181
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMG2G200US60
Manufacturer Part Number
FMG2G200US60
Description
IGBT MOLDING 600V 200A 7PM-HA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG2G200US60
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
250µA
Power - Max
695W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-HA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G200US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FMG2G200US60
Quantity:
55
Company:
Part Number:
FMG2G200US60E
Manufacturer:
COSEL
Quantity:
387
- Current page: 181 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Discrete IGBTs (Continued)
HGTP20N60A4
HGTP2N120CN
HGTP5N120BND
HGTP10N120BN
TO-220F
SGS6N60UF
SGS6N60UFD
SGS5N60RUFD
SGS13N60UFD
SGS10N60RUF
DS900365
SGS23N60UFD
SGS5N150UF
TO-247
FGH50N3
HGTG12N60B3
HGTG12N60C3D
FGH20N6S2
FGH20N6S2D
HGTG7N60A4
HGTG7N60A4D
HGTG20N60C3D
HGTG20N60B3
HGTG20N60B3D
FGH30N6S2D
FGH30N6S2
HGTG12N60A4
HGTG12N60A4D
HGTG30N60B3
HGTG30N60B3D
HGTG30N60C3D
FGH40N6S2
FGH40N6S2D
Products
BV
CES
1200
1200
1200
1500
600
600
600
600
600
600
600
600
300
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
Min (V)
I
C
@100°C
40
10
17
10
10
12
75
12
12
13
13
14
14
20
20
20
20
20
23
23
30
30
30
35
35
7
3
3
5
6
5
V
CE(sat)
2.05
2.45
2.45
1.65
1.95
1.45
1.45
(V)
1.8
2.1
2.1
2.2
2.1
2.2
2.2
2.1
4.7
1.3
1.6
2.2
2.2
1.9
1.9
1.4
1.8
1.8
1.5
1.9
1.9
2
2
2
Typ
2-176
t
f
Typ (ns)
260
160
200
136
158
158
275
275
32
70
70
97
70
70
12
62
50
50
45
45
98
70
70
90
53
18
18
58
58
55
85
Short Circut
Bold = New Products (introduced January 2003 or later)
Rated
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
–
Built in Diode
Discrete Power Products –
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
No
No
No
No
No
No
No
No
No
No
No
No
No
No
Induction Heating, Motor, Power
Induction Heating, Motor, Power
Induction Heating, Motor, Power
Induction Heating, Motor, Power
Primary Applications
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Motor, Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Power Conversion
Conversion
Conversion
Conversion
Conversion
Motor
Motor
Motor
Motor
Motor
IGBTs
Related parts for FMG2G200US60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: