FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 162
FMG2G200US60
Manufacturer Part Number
FMG2G200US60
Description
IGBT MOLDING 600V 200A 7PM-HA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG2G200US60
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
250µA
Power - Max
695W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-HA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G200US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FMG2G200US60
Quantity:
55
Company:
Part Number:
FMG2G200US60E
Manufacturer:
COSEL
Quantity:
387
- Current page: 162 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMCJ48A
SMCJ48CA
SMCJ51A
SMCJ51CA
SMCJ54A
SMCJ54CA
SMCJ58A
SMCJ58CA
SMCJ60A
SMCJ60CA
SMCJ64A
SMCJ64CA
SMCJ70A
SMCJ70CA
SMCJ75A
SMCJ75CA
SMCJ78A
SMCJ78CA
SMCJ85A
SMCJ85CA
SMCJ90A
SMCJ90CA
SMCJ100A
SMCJ100CA
SMCJ110A
SMCJ110CA
SMCJ120A
SMCJ120CA
SMCJ130A
SMCJ130CA
SMCJ150A
SMCJ150CA
SMCJ160A
SMCJ160CA
SMCJ170A
Products
Voltage (V)
Stand-off
Reverse
V
100
100
110
110
120
120
130
130
150
150
160
160
170
RWM
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
V
Min
53.3
53.3
56.7
56.7
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
60
60
BR
Voltage (V)
Breakdown
111.1
111.1
Max
58.9
58.9
62.7
62.7
66.3
66.3
71.2
71.2
73.7
73.7
78.6
78.6
92.1
92.1
95.8
95.8
104
104
123
123
135
135
147
147
159
159
185
185
197
197
209
86
86
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-157
77.4
77.4
82.4
82.4
87.1
87.1
93.6
93.6
96.8
96.8
103
113
113
121
121
126
126
137
137
146
146
162
162
177
177
193
193
209
209
243
243
259
259
275
1.3
V
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
19.4
19.4
18.2
18.2
17.2
17.2
15.5
15.5
14.6
14.6
13.3
13.3
12.4
12.4
11.9
11.9
10.9
10.9
10.3
10.3
PPM
9.3
8.5
7.8
7.2
6.2
5.8
5.5
9.3
8.5
7.8
7.2
6.2
5.8
16
16
Leakage @ V
I
R
Max Reverse
(µA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FMG2G200US60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: