MCHC908GR8AVFAE Freescale Semiconductor, MCHC908GR8AVFAE Datasheet - Page 248

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MCHC908GR8AVFAE

Manufacturer Part Number
MCHC908GR8AVFAE
Description
IC MCU 8K FLASH 8MHZ 32-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MCHC908GR8AVFAE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
21
Program Memory Size
7.5KB (7.5K x 8)
Program Memory Type
FLASH
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCHC908GR8AVFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Electrical Specifications
19.16 Timer Interface Module Characteristics
19.17 Memory Characteristics
248
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
Input capture pulse width
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
Characteristic
MC68HC908GR8A • MC68HC908GR4A Data Sheet, Rev. 5
NVS
+ t
NVH
+ t
PGS
+ (t
PROG
x 32) ≤ t
Symbol
f
t
HV
t
Read
t
MErase
V
t
t
RCV
t
PROG
t
t
t
Erase
NVHL
HV
NVH
PGS
NVS
RDR
maximum.
(3)
(2)
(1)
Symbol
t
TIH
, t
TIL
10 k
Min
100
1.3
0.9
3.6
10
30
15
1
4
5
5
1
Min
1
100 k
Typ
100
1
4
Freescale Semiconductor
Max
Max
8.2
1.1
5.5
40
4
Cycles
Unit
Years
t
MHz
MHz
Unit
cyc
ms
ms
ms
μs
μs
μs
μs
μs
μs
V

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