M30290FAHP#U5A Renesas Electronics America, M30290FAHP#U5A Datasheet - Page 356

• Manufacturer Part Number: M30290FAHP#U5A
• Description: IC M16C/29 MCU FLASH 96K 80LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/Tiny/29r

Specifications of M30290FAHP#U5A

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, POR, PWM, Voltage Detect, WDT
• Number Of I /o: 71
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 27x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 80-LQFP
• For Use With: R0K330290S000BE - KIT EVAL STARTER FOR M16C/29M30290T2-CPE - EMULATOR COMPACT M16C/26A/28/29M30290T2-CPE-HP - EMULATOR COMPACT FOR M16C/TINY
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

R
R
M
20. Flash Memory Version
20.1 Flash Memory Performance
e
E
1
. v
J
Table 20.1 Flash Memory Version Specifications
NOTES:
6
Flash memory operating mode
Erase block
Program method
Erase method
Program, erase control method
Protect method
Number of commands
Program/Erase
Endurance
Data Retention
ROM code protection
0
In the flash memory version, rewrite operation to the flash memory can be performed in four modes: CPU
rewrite mode, standard serial I/O mode, parallel I/O mode, and CAN I/O mode.
Table 20.1 lists specifications of the flash memory version. (Refer to Table 1.1 or Table 1.2 for the items
not listed in Table 20.1.
C
1
9
1 .
B
2 /
1. Program and erase endurance definition
2. To use the limited number of erasure efficiently, write to unused address within the block instead of rewrite. Erase
3. The M16C/29 Group, T-ver./V-ver. does not support the CAN I/O mode.
0
2
9
1
Program and erase endurance are the erase endurance of each block. If the program and erase endurance are n
times (n=100,1000,10000), each block can be erased n times. For example, if a 2-Kbyte block A is erased after
writing 1 word data 1024 times, each to different addresses, this is counted as one program and erasure.
However, data cannot be written to the same address more than once without erasing the block. (Rewrite
disabled)
block only after all possible address are used. For example, an 8-word program can be written 128 times before
erase is necessary. Maintaining an equal number of erasure between Block A and B will also improve efficiency.
We recommend keeping track of the number of times erasure is used.
M
0
G
1
r a
0 -
o r
3 .
(1)
1
u
, 0
1
p
2
2
0
0
7
Block 0 to 5 (program area)
Block A and B (data are)
Item
page 330
f o
4
5
8
(2)
4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
See Figures 20.1 to 20.3 Flash Memory Block Diagram
In units of word
Block erase
Program and erase controlled by software command
Blocks 0 to 5 are write protected by FMR16 bit.
In addition, the block 0 and block 1 are write protected by FMR02 bit
5 commands
100 times
100 times 10,000 times (See Tables 1.6 to 1.8)
20 years (Topr = 55 C)
Parallel I/O, standard serial I/O, and CAN I/O modes are supported.
1,000 times (See Tables 1.6 to 1.8)
Specification
(3)