ST7FDALIF2M6TR STMicroelectronics, ST7FDALIF2M6TR Datasheet - Page 140

• Manufacturer Part Number: ST7FDALIF2M6TR
• Description: IC MCU 8BIT 8K FLASH 20-SOIC
• Manufacturer: STMicroelectronics
• Series: ST7r

Specifications of ST7FDALIF2M6TR

• Core Processor: ST7
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: DALI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.4 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Processor Series: ST7DALI
• Core: ST7
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: DALI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 15
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: ST7FLITE-SK/RAIS, ST7DALI-EVAL, ST7MDT10-DVP3, ST7MDT10-EMU3, STX-RLINK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 7 Channel / 13 bit, 7 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
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Table 79.
1. Up to 32 bytes can be programmed at a time.
2. Data based on reliability test results and monitored in production.
3. The data retention time increases when the T
4. Design target value pending full product characterization.
5. Guaranteed by design. Not tested in production.
Table 80.
1. Data based on reliability test results and monitored in production.
2. The data retention time increases when the T
3. Design target value pending full product characterization.
Symbol
Symbol
N
N
V
t
t
V
t
I
prog
prog
RET
t
DD
ret
RW
RW
DD
DD
Operating voltage for
EEPROM write/erase
Programming time for 1~32
bytes
Data retention
Write erase cycles
Operating voltage for Flash
write/erase
Programming time for 1~32 bytes
(1)
Programming time for 1.5 kBytes
Data retention
Write erase cycles
Supply current
FLASH program memory
EEPROM data memory
Parameter
Parameter
(1)
(2)
T
T
T
A
A
A
A
A
decreases.
decreases.
=−40 to +85°C
=+55°C
=+25°C
T
T
T
T
Read / Write / Erase
modes
f
5.5 V
No Read/No Write
Mode
Power down mode /
Halt
CPU
Conditions
A
A
A
A
=−40 to +85° C
=+25° C
=+55° C
=+25° C
= 8 MHz, V
Conditions
(2)
(3)
DD
=
300K
Min
2.4
20
(3)
10K
Min
2.4
20
(4)
Typ
5
0.24
Typ
5
0
Max
2.6
5.5
10
Max
0.48
100
5.5
0.1
ST7DALIF2
10
(5)
cycles
cycles
years
years
Unit
Unit
ms
mA
ms
μA
μA
V
V
s