LPC2939FBD208,551 NXP Semiconductors, LPC2939FBD208,551 Datasheet - Page 79

• Manufacturer Part Number: LPC2939FBD208,551
• Description: IC ARM9 MCU FLASH 768KB 208-LQFP
• Manufacturer: NXP Semiconductors
• Series: LPC2900r

Specifications of LPC2939FBD208,551

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 125MHz
• Connectivity: CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB, USB OTG
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 152
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 16K x 8
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-LQFP
• Processor Series: LPC29
• Core: ARM968E-S
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: OM11027
• Package: 208LQFP
• Device Core: ARM968E-S
• Family Name: LPC2900
• Operating Supply Voltage: 1.8|3.3 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 160
• Interface Type: CAN/I2C/LIN/QSPI/UART/USB
• On-chip Adc: 24-chx10-bit
• Number Of Timers: 6
• For Use With: 568-4787 - BOARD EVAL LPC2939
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935287113551

NXP Semiconductors
Table 42.
V
ground.
[1]
[2]
[3]
[4]
LPC2939_3
Product data sheet
Symbol
T
t
t
Read cycle parameters
t
t
t
t
t
t
t
t
t
Write cycle parameters
t
t
t
t
t
t
t
a(R)int
a(W)int
CSLAV
OELAV
CSLOEL
su(DQ)
h(D)
CSHOEH
BLSLBLSH
OELOEH
BLSLAV
CSHBLSH
CSLWEL
CSLBLSL
WELDV
CSLDV
WELWEH
BLSLBLSH
DD(CORE)
CLCL
All parameters are guaranteed over the virtual junction temperature range by design. Pre-testing is performed at T
temperature on wafer level. Cased products are tested at T
test conditions to cover the specified temperature and power supply voltage range.
When the byte lane select signals are used to connect the write enable input (8 bit devices), t
When the byte lane select signals are used to connect the write enable input (8 bit devices), t
For 16 and 32 bit devices.
[1]
= V
Parameter
clock cycle time
internal read access time
internal write access time
CS LOW to address valid
time
OE LOW to address valid
time
CS LOW to OE LOW time
data input /output set-up
time
data input hold time
CS HIGH to OE HIGH time
BLS LOW to BLS HIGH time
OE LOW to OE HIGH time
BLS LOW to address valid
time
CS HIGH to BLS HIGH time
CS LOW to WE LOW time
CS LOW to BLS LOW time
WE LOW to data valid time
CS LOW to data valid time
WE LOW to WE HIGH time
BLS LOW to BLS HIGH time
External static memory interface dynamic characteristics
DD(OSC_PLL)
9.6 Dynamic characteristics: external static memory
; V
DD(IO)
= 2.7 V to 3.6 V; V
Conditions
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 7 April 2010
DDA(ADC3V3)
[2]
[3]
[4]
amb
Min
8
-
-
5
5  WSTOEN  T
-
11
0
-
-
-
-
-
-
-
-
0.5
-
-
= 25 C (final testing). Both pre-testing and final testing use correlated
= 3.0 V to 3.6 V; all voltages are measured with respect to
ARM9 microcontroller with CAN, LIN, and USB
CLCL
-
Typ
-
-
2.5
2.5  WSTOEN  T
0 + WSTOEN  T
16
2.5
0
(WST1  WSTOEN +1) 
T
(WST1  WSTOEN +1) 
T
0 + WSTOEN  T
0
(WSTWEN + 0.5)  T
WSTWEN  T
(WSTWEN + 0.5)  T
0.1
(WST2  WSTWEN +1) 
T
(WST2 - WSTWEN +2) 
T
CLCL
CLCL
CLCL
CLCL
CSHBLSH
CSLBLSL
= t
= 0.5  T
CSLWEL
CLCL
CLCL
CLCL
.
LPC2939
CLCL
© NXP B.V. 2010. All rights reserved.
CLCL
amb
CLCL
CLCL
.
= 85 C ambient
Max Unit
100
20.5 ns
24.9 ns
-
-
-
22
5
-
-
-
-
-
-
-
-
0.3
-
-
79 of 99
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns