LPC2939FBD208,551 NXP Semiconductors, LPC2939FBD208,551 Datasheet - Page 66

• Manufacturer Part Number: LPC2939FBD208,551
• Description: IC ARM9 MCU FLASH 768KB 208-LQFP
• Manufacturer: NXP Semiconductors
• Series: LPC2900r

Specifications of LPC2939FBD208,551

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 125MHz
• Connectivity: CAN, EBI/EMI, I²C, LIN, SPI, UART/USART, USB, USB OTG
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 152
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 16K x 8
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-LQFP
• Processor Series: LPC29
• Core: ARM968E-S
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2
• Development Tools By Supplier: OM11027
• Package: 208LQFP
• Device Core: ARM968E-S
• Family Name: LPC2900
• Operating Supply Voltage: 1.8|3.3 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 160
• Interface Type: CAN/I2C/LIN/QSPI/UART/USB
• On-chip Adc: 24-chx10-bit
• Number Of Timers: 6
• For Use With: 568-4787 - BOARD EVAL LPC2939
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935287113551

NXP Semiconductors
Table 34.
V
T
specified.
LPC2939_3
Product data sheet
Symbol
V
V
I
I
I
I
C
Output pins and I/O pins configured as output
V
V
V
C
USB pins USB_D+ and USB_D
Input characteristics
V
V
V
Output characteristics
Z
V
V
I
LIH
LIL
I(pd)
I(pu)
OH
vj
DD(CORE)
o
IL
hys
O
OH
OL
IH
IL
hys
OH
OL
i
L
=

40

[1]
C to +85
= V
Static characteristics
DD(OSC_PLL)
Parameter
LOW-level input voltage
hysteresis voltage
HIGH-level input leakage
current
LOW-level input leakage
current
pull-down input current
pull-up input current
input capacitance
output voltage
HIGH-level output voltage I
LOW-level output voltage I
load capacitance
HIGH-level input voltage
LOW-level input voltage
hysteresis voltage
output impedance
HIGH-level output voltage (driven) for
LOW-level output voltage (driven) for
HIGH-level output current at V

C; all voltages are measured with respect to ground; positive currents flow into the IC; unless otherwise
; V
DD(IO)
= 2.7 V to 3.6 V; V
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
all port pins, RST, TRST,
TDI, JTAGSEL, TMS,
TCK
all port pins, V
V
all port pins, RST, TRST,
TDI, JTAGSEL, TMS:
V
allowed; see
Figure 22
Figure 21
with 33 series resistor
low-/full-speed; R
15 k to GND
low-/full-speed; with
1.5 k resistor to 3.6 V
external pull-up
without 33  external
series resistor
at V
with 33 external series
resistor
OH
OL
I
I
= 5.5 V; see
= 0 V; V
= 4 mA; see
= 4 mA; see
OH
OH
= V
= V
Rev. 03 — 7 April 2010
DDA(ADC3V3)
I
DD(IO)
DD(IO)
> 3.6 V is not
Figure 24
I
Figure 23
= 3.3 V;
 0.3 V;
 0.3 V;
L
of
= 3.0 V to 3.6 V; V
ARM9 microcontroller with CAN, LIN, and USB
[7]
-
1.5
-
Min
-
0.4
-
-
25
25
-
0
V
-
0.4
36.0
2.9
-
20.8
4.8
DD(IO)
DDA(ADC5V0)
– 0.4
Typ
-
-
-
-
50
50
3
-
-
-
-
-
-
-
-
-
-
-
-
= 3.0 V to 5.5 V;
Max
0.8
-
1
1
100
115
8
V
-
0.4
25
-
1.3
-
44.1
3.5
0.18
41.7
5.3
DD(IO)
LPC2939
© NXP B.V. 2010. All rights reserved.
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Unit
V
V
A
A
A
A
pF
V
V
V
pF
V
V
V

V
V
mA
mA