STM8S105C4B3 STMICROELECTRONICS [STMicroelectronics], STM8S105C4B3 Datasheet - Page 99

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STM8S105C4B3

Manufacturer Part Number
STM8S105C4B3
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
STM8S105xx
Symbol
Symbol
t
t
t
(1)
(2)
by the external source. The internal resistance of the analog source must allow the
capacitance to reach its final voltage level within t
changes of the analog input voltage have no effect on the conversion result. Values for the
sample clock t
|E
|E
|E
S
STAB
CONV
T
O
G
(2)
During the sample time the input capacitance C
Data guaranteed by design, not tested in production..
|
|
|
Parameter
Sampling time
Wakeup time from standby
Total conversion time
(including sampling time,
10-bit resolution)
Parameter
Total unadjusted error
Offset error
Gain error
S
depend on programming.
Table 46: ADC accuracy with R
(2)
(2)
DocID14771 Rev 9
(2)
Conditions
f
f
f
f
Conditions
ADC
ADC
ADC
ADC
f
f
f
f
f
f
f
f
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
= 4 MHz
= 6 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
= 6 MHz
= 2 MHz
= 4 MHz
AIN
S.
AIN
After the end of the sample time t
(3 pF max) can be charged/discharged
< 10 kΩ , V
Min
0.75
0.5
3.5
2.33
14
Electrical characteristics
DDA
Typ
1
1.4
1.6
0.6
1.1
1.2
0.2
0.6
= 5 V
Typ
7
Max
2.5
3
3.5
2
2.5
2.5
2
2.5
Max
(1)
Unit
LSB
Unit
µs
µs
µs
µs
1/f
99/127
S
ADC
,

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