STM8S105C4B3 STMICROELECTRONICS [STMicroelectronics], STM8S105C4B3 Datasheet - Page 103

• Manufacturer Part Number: STM8S105C4B3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STM8S105xx
10.3.12.3
Electromagnetic interference (EMI)
Emission tests conform to the IEC61967-2 standard for test software, board layout and pin
loading.
Symbol
Symbol
V
V
(1)
in AN2860 (EMC guidelines for STM8S microcontrollers).
S
(1)
FESD
EFTB
EMI
Data obtained with HSI clock configuration, after applying HW recommendations described
Data based on characterization results, not tested in production.
Parameter
Parameter
Peak level
SAE EMI
level
Voltage limits to be
applied on any I/O pin to
induce a functional
disturbance
Fast transient voltage
burst limits to be applied
through 100 pF on V
and V
functional disturbance
SS
pins to induce a
Conditions
General
conditions
V
T
LQFP48
package
conforming to
IEC61967-2
A
DD
= +25 °C,
= 5 V,
DocID14771 Rev 9
DD
Table 48: EMS data
Conditions
Table 49: EMI data
V
(HSI clock), conforming to IEC 61000-4-2
V
(HSI clock),conforming to IEC 61000-4-4
DD
DD
= 3.3 V, T
Monitored
frequency
band
= 3.3 V, T
0.1 MHz to
30 MHz
30 MHz to
130 MHz
130 MHz to 1
GHz
A
A
= 25 °C ,f
= 25 °C, f
Max f
8 MHz/ 8
MHz
13
23
-4
2
MASTER
MASTER
HSE
Electrical characteristics
/f
CPU
= 16 MHz
= 16 MHz
8 MHz/ 16
MHz
14
19
-4
1.5
(1)
Level/
class
2/B
4/A
Unit
103/127
(1)
(1)
dBµV
—