MT48LC16M16A2P-7E:D Micron Technology Inc, MT48LC16M16A2P-7E:D Datasheet - Page 67

SDRAM 256MB, SMD, 48LC16, TSOP54

MT48LC16M16A2P-7E:D

Manufacturer Part Number
MT48LC16M16A2P-7E:D
Description
SDRAM 256MB, SMD, 48LC16, TSOP54
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r

Specifications of MT48LC16M16A2P-7E:D

Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Package / Case
TSOP
Memory Type
DRAM - Synchronous
Memory Configuration
4 BLK (4M X 16)
Interface Type
LVTTL
Rohs Compliant
Yes
Format - Memory
RAM
Memory Size
256M (16Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC16M16A2P-7E:D
Manufacturer:
MICRON
Quantity:
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MT48LC16M16A2P-7E:D
Manufacturer:
MT
Quantity:
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Part Number:
MT48LC16M16A2P-7E:D
Manufacturer:
MICRON
Quantity:
8 000
Part Number:
MT48LC16M16A2P-7E:D TR
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT48LC16M16A2P-7E:D TR
Manufacturer:
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Quantity:
6 700
Figure 52:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CKE
CLK
A10
DQ
WRITE – Full-Page Burst
t CMS
t CKS
Notes:
t AS
t AS
t AS
ACTIVE
BANK
ROW
ROW
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
1. x16: A8, A9 and A11 = “Don’t Care”
2.
3. Page left open; no
t CL
x8: A9 and A11 = “Don’t Care”
x4: A11 = “Don’t Care”
t
WR must be satisfied prior to PRECHARGE command.
T1
NOP
t CH
t CMS
t CK
COLUMN m 1
t DS
D
T2
WRITE
BANK
IN
t CMH
t DH
m
t
RP.
t DS
D
IN
T3
NOP
m + 1
t DH
67
1,024 (x4) locations within same row
256 (x16) locations within same row
512 (x8) locations within same row
t DS
D
IN
T4
NOP
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
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64Mb: x4, x8, x16 SDRAM
t DS
Tn + 1
D
IN
NOP
m - 1
t DH
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
©2000 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t DS
BURST TERM
Tn + 2
t DH
2, 3
DON’T CARE
Tn + 3
NOP

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