MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 72

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RESET Function
(CKE LOW Anytime)
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
DDR2 SDRAM applications may go into a reset state anytime during normal operation.
If an application enters a reset condition, CKE is used to ensure the DDR2 SDRAM
device resumes normal operation after re-initializing. All data will be lost during a reset
condition; however, the DDR2 SDRAM device will continue to operate properly if the
following conditions outlined in this section are satisfied.
The reset condition defined here assumes all supply voltages (V
V
operation. All other input pins of the DDR2 SDRAM device are a “Don’t Care” during
RESET with the exception of CKE.
WRITE burst), the memory controller must satisfy the timing parameter
turning off the clocks. Stable clocks must exist at the CK, CK# inputs of the DRAM before
CKE is raised HIGH, at which time the normal initialization sequence must occur. See
“Initialization” on page 16. The DDR2 SDRAM device is now ready for normal operation
after the initialization sequence. Figure 55 on page 73 shows the proper sequence for a
RESET operation.
If CKE asynchronously drops LOW during any valid operation (including a READ or
REF
) are stable and meet all DC specifications prior to, during, and after the RESET
72
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
©2004 Micron Technology, Inc. All rights reserved.
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