MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 35

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 15:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
ACTIVE Command
A subsequent ACTIVE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The minimum
time interval between successive ACTIVE commands to different banks is defined by
t
DDR2 SDRAM also supports the AL feature, which allows a READ or WRITE command to
be issued prior to
command to the internal device by AL clock cycles.
BANK ADDRESS
RRD.
ADDRESS
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
DON’T CARE
t
RCD (MIN) by delaying the actual registration of the READ/WRITE
Bank
Row
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Bank/Row Activation
©2004 Micron Technology, Inc. All rights reserved.