MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 13
MT47H64M8CB-3:B
Manufacturer Part Number
MT47H64M8CB-3:B
Description
IC DDR2 SDRAM 512MBIT 3NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H64M8CB-5EB.pdf
(133 pages)
Specifications of MT47H64M8CB-3:B
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H64M8CB-3:B
Manufacturer:
MICRON
Quantity:
12 388
Company:
Part Number:
MT47H64M8CB-3:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT47H64M8CB-3:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Table 3:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
x16 FBGA Ball
L1, R3, R7, R8
Number
A8, E8
–
–
FBGA 84-/60-Ball Descriptions – 128 Meg x 4, 64 Meg x 8, 32 Meg x 16 (continued)
Ball Number
x4, x8 FBGA
G1, L3, L7
A2, A8
–
–
Symbol
RFU
RFU
NU
NU
Type Description
–
–
–
–
Not used: Not used only on x16. If EMR[E10] = 0, A8 and E8 are
UDQS# and LDQS#. If EMR[E10] = 1, then A8 and E8 are not used.
Not used: Not used only on x8. If EMR[E10] = 0, A2 and A8 are
RDQS# and DQS#.
If EMR[E10] = 1, then A2 and A8 are not used.
Reserved for future use (x16 only): Row address bits A13 (R8), A14
(R3), and A15 (R7) are reserved for 2Gb and 4Gb densities. BA2 (L1)
is reserved for 1Gb device.
Reserved for future use (x4, x8 only): Row address bits A14 (L3) and
A15 (L7) are reserved for 2Gb and 4Gb densities. BA2 (G1) is
reserved for 1Gb device.
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Ball Assignment and Description
©2004 Micron Technology, Inc. All rights reserved.
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