MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 119

IC DDR2 SDRAM 512MBIT 3NS 60FBGA

MT47H64M8CB-3:B

Manufacturer Part Number
MT47H64M8CB-3:B
Description
IC DDR2 SDRAM 512MBIT 3NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT47H64M8CB-3:B

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H64M8CB-3:B
Manufacturer:
MICRON
Quantity:
12 388
Part Number:
MT47H64M8CB-3:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H64M8CB-3:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 48:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
Address and control
input pulse width for
each input
Address and control
input setup time
Address and control
input hold time
Address and control
input setup time
Address and control
input hold time
CAS# to CAS#
command delay
ACTIVE-to-ACTIVE
(same bank)
command
ACTIVE bank a to
ACTIVE bank b
command
ACTIVE-to-READ or
WRITE delay
4-Bank activate
period
4-Bank activate
period
ACTIVE-to-
PRECHARGE
command
Internal READ-to-
PRECHARGE
command delay
Write recovery time
Auto precharge
write recovery +
precharge time
Internal WRITE-to-
READ command
delay
PRECHARGE
command period
PRECHARGE ALL
command period
LOAD MODE
command cycle time
Parameter
AC Characteristics
AC Operating Conditions for -3E, -3, -37E, and -5E Speeds (Sheet 4 of 6)
Notes: 1–5; notes appear on page 126; V
Symbol
(x4, x8)
(x4, x8)
t
t
t
t
(x16)
(x16)
t
t
t
t
t
t
t
t
t
t
MRD
t
t
FAW
FAW
WTR
CCD
RRD
RRD
RCD
DAL
IPW
t
t
t
RAS
RPA
RTP
t
WR
IH
IH
IS
IS
RC
RP
a
b
b
a
t
t
WR +
Min
37.5
400
400
200
275
RP +
t
t
0.6
7.5
7.5
7.5
54
10
12
50
40
15
12
CK
RP
2
2
-3E
70,000
Max
DD
t
t
WR +
Min
37.5
400
400
200
275
RP +
t
0.6
7.5
7.5
t
7.5
Q = +1.8V ±0.1V, V
55
10
15
50
40
15
15
CK
RP
2
2
119
-3
70,000
Max
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
WR +
Min
37.5
500
500
250
375
RP +
t
0.6
7.5
7.5
t
7.5
55
10
15
50
40
15
15
RP
CK
DD
2
2
512Mb: x4, x8, x16 DDR2 SDRAM
= +1.8V ±0.1V
-37E
70,000
Max
AC Operating Specifications
t
t
WR +
Min
37.5
RP +
600
600
350
475
t
t
0.6
7.5
7.5
55
10
15
50
40
15
10
15
CK
RP
2
2
©2004 Micron Technology, Inc. All rights reserved.
-5E
70,000
Max
Units Notes
t
t
t
CK
ps
ps
ps
ps
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
18, 31,
21, 25,
31, 37
25, 37
25, 37
28, 37
28, 37
25, 37
25, 37
29, 37
6, 19
6, 19
6, 19
6, 19
37
37
37
37
37
20
29
37

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