MT47H64M8CB-3:B Micron Technology Inc, MT47H64M8CB-3:B Datasheet - Page 57

• Manufacturer Part Number: MT47H64M8CB-3:B
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8CB-3:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 39:
PDF: 09005aef8117c18e, Source: 09005aef8211b2e6
512MbDDR2_2.fm - Rev. K 8/06 EN
COMMAND
DQS,DQS#
ADDRESS
BA0, BA1
CK#
CKE
A10
DQ
DM
CK
4
1
NOP
Bank Write – with Auto Precharge
T0
5
Notes:
Bank x
ACT
RA
T1
RA
1. DI n = data-in from column n; subsequent elements are applied in the programmed order.
2. BL = 4, AL = 0, and WL = 2 in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE, RA = row address, BA = bank address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these
6.
7.
8. WR is programmed via MR[11, 10, 9] and is calculated by dividing
9. Subsequent rising DQS signals must align to the clock within
t CK
times.
t
t
t
DSH is applicable during
DSS is applicable during
CK and rounding up to the next integer value.
t RCD
t RAS
NOP
T2
5
t CH
t CL
WRITE
Bank x
Col n
3
T3
2
WL ± t DQSS (NOM)
t
t
DQSS (MAX) and is referenced from CK T6 or T7.
WL = 2
DQSS (MIN) and is referenced from CK T5 or T6.
NOP
T4
57
5
t WPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T5
DI
n
5
T5n
512Mb: x4, x8, x16 DDR2 SDRAM
t DQSL t DQSH t WPST
NOP
9
T6
5
T6n
TRANSITIONING DATA
t
NOP
T7
DQSS.
©2004 Micron Technology, Inc. All rights reserved.
5
t
WR (in nanoseconds) by
WR 8
NOP
T8
5
DON’T CARE
WRITEs
NOP
T9
5
t RP